Browsing by Author "Manyala, N."

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    A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition
    (AIP Publishing, 2016-01-07) Fabiane, M.; Madito, M. J.; Bello, A.; Oliphant, C. J.; Dangbegnon, J. K.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N.
    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.
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    Raman spectroscopy and imaging of Bernalstacked bilayer graphene synthesized on copper foil by chemical vapour deposition: growth dependence on temperature
    (2017) Fabiane, M.; Madito, M. J.; Bello, A.; Manyala, N.
    We report on the effect of temperature on the growth of bilayer graphene on a copper foil under atmospheric pressure chemical vapour deposition (AP-CVD). Before characterization of the AP-CVD bilayer graphene, a high-quality graphene flake was obtained from the Kish bulk graphite by micro-mechanical exfoliation and characterized by using Raman spectroscopy and imaging. The Raman data of the exfoliated, high-quality graphene flake show monolayer and bilayer graphenes and were compared with the Raman data of AP-CVD graphene. Raman spectroscopy of AP-CVD graphene shows bilayer films that exhibit predominantly Bernal stacking with an I2D/IG ratio of ~1. At low growth temperature (~780 °C), Raman disorder-related peak intensity in the AP-CVD graphene is high and decreases with an increase in growth temperature to the lowest disorder intensity at ~973 °C. The selected area electron diffraction and atomic force microscopy average step height analysis showed the thickness of the bilayer graphene. The AP-CVD graphene is uniform at low growth temperatures (~780 °C) with a high disorder and becomes nonuniform at high growth temperatures (~867–973 °C) with a very low disorder as bilayer graphene evolves to form islands with an average lateral size of <10 μm. Competition between carbon adatoms supply through dehydrogenation of the CHx species, mobility and desorption rate of the carbon-adatom species for nucleation of the bilayer graphene as a function of temperature is elucidated. This study provides further insight into the growth mechanisms of bilayer graphene by AP-CVD on Cu.