Growth of graphene underlayers by chemical vapor deposition

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dc.contributor.authorFabiane, M.
dc.contributor.authorKhamlich, S.
dc.contributor.authorBello, A.
dc.date.accessioned2016-11-28T11:40:21Z
dc.date.available2016-11-28T11:40:21Z
dc.date.issued2013
dc.description.abstractWe present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called �inverted wedding cake�stacking in multilayer graphene growth.
dc.identifier.citationFabiane, M., Khamlich S., Bello A., Dangbegnon J., Momodu D., Charlie-Johnson,A. T. and Manyala, N.. Growth of graphene underlayers by chemical vapour deposition, AIP Advances 3, 112126 (2013)
dc.identifier.issn2158-3226
dc.identifier.otherY
dc.identifier.urihttp://dx.doi.org/10.1063/1.4834975
dc.identifier.urihttp://repository.tml.nul.ls/handle/20.500.14155/59
dc.language.isoEn
dc.publisherAIP Publishing
dc.rightsCreative Commons CC BY
dc.subjectGraphene
dc.titleGrowth of graphene underlayers by chemical vapor depositionen
dc.typeArticle
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